PART |
Description |
Maker |
RURG50120 FN3740 |
50A, 1200V Ultrafast Diode(50A, 1200V 瓒?揩??????) 50A, 1200V Ultrafast Diode(50A, 1200V 超快速二极管) 50 A, 1200 V, SILICON, RECTIFIER DIODE 50A 1200V Ultrafast Diode From old datasheet system
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HARRIS SEMICONDUCTOR Intersil, Corp. INTERSIL[Intersil Corporation]
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IRG4PH40UD-EPBF |
1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package
|
International Rectifier
|
GA150TD120U |
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a Dual INT-A-Pak package
|
International Rectifier
|
GA200TD120U |
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a Dual INT-A-Pak package
|
International Rectifier
|
IRG4BH20K-S |
1200V UltraFast 4-20 kHz Discrete IGBT in a D2-Pak package INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
IRG4BH20K-L |
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-262 package INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
IRGPS40B12 IRGPS40B120U |
1200V UltraFast 8-25 kHz Single IGBT in a TO-274AA package INSULATED GATE BIPOLAR TRANSISTOR 绝缘栅双极晶体管
|
IR http:// International Rectifier, Corp.
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IRGPS60B120KD 2023 |
1200V UltraFast 5-40 kHz Copack IGBT in a TO-274AA package From old datasheet system INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
IRG4PSH71KD |
78 A, 1200 V, N-CHANNEL IGBT 1200V UltraFast 4-20 kHz Copack IGBT in a TO-274AA package
|
International Rectifier
|
IRG4PH50U |
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.78V @Vge=15V Ic=24A) INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)
|
IRF[International Rectifier]
|
IRG7PH35UD-EP |
1200V UltraFast Discrete IGBT in a TO-247 package with UltraFast Soft Recovery Diode
|
International Rectifier
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